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Silicon Wafer 11N (99.999999999)%, 200MM (8 INCH)

Silicon Wafer 11N (99.999999999)%, 200MM (8 INCH)

The Pinnacle of Material Purity for Next-Generation Semiconductor Fabrication

At INNOWAFERS, we engineer the ultra-pure physical foundation upon which next-generation electronic systems are built. Our 200 mm (8-inch) monocrystalline silicon wafers are refined to an extraordinary 11N purity level (99.999999999%), setting a benchmark in material perfection. Engineered specifically to eliminate trace-level metallic contaminants, crystal dislocations, and micro-defects, our 11N 200 mm silicon substrates provide unmatched yield reliability, precise mechanical flatness, and superior thermal stability for demanding semiconductor fabrication processes.

Ideal Applications

  • Advanced CMOS & IC Fabrication: High-density integrated circuits, microprocessors, and memory devices requiring minimal lattice disruption.

  • Power Electronics & Automotive: High-voltage MOSFETs, IGBTs, and power modules for electric vehicles (EV), smart grids, and industrial automation.

  • MEMS & Microfluidic Sensors: High-precision pressure sensors, accelerometers, and micro-actuators benefiting from uniform planarization.

  • R&D and Pilot Lines: Foundational 200 mm substrates for advanced corporate R&D, university research, and commercial prototyping facilities.

Technical Specifications

Parameter Specification
Growth Method Czochralski (CZ) Monocrystalline
Crystal Orientation <100> (± 0.5°)
Purity Grade 11N (99.999999999% Electronic-Grade)
Resistivity Range 1 – 20  (P-Type Boron / N-Type Options Available)
Thickness 725 µm ± 25 µm (Standard / Custom Options Available)
Surface Finish Single-Side Polished (SSP) or Double-Side Polished (DSP)
Packaging Sealed under Nitrogen in Class 1 Cleanroom ESD Cassettes / Shippers
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