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Silicon Wafer 11N (99.999999999)%, 150MM (6 Inch)

Silicon Wafer 11N (99.999999999)%, 150MM (6 Inch)

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11N Ultra-High Purity Monocrystalline Silicon Wafers (150 mm / 6-Inch)

The Pinnacle of Material Purity for Advanced Microelectronics

At INNOWAFERS, we engineer the ultra-pure physical foundation upon which next-generation electronic systems are built. Our 150 mm (6-inch) monocrystalline silicon wafers are refined to an extraordinary 11N purity level (99.999999999%), setting a benchmark in material perfection. Engineered specifically to eliminate trace-level metallic contaminants, crystal dislocations, and micro-defects, our 11N silicon substrates provide unmatched yield reliability for the most demanding semiconductor fabrication processes.

Ideal Applications

  • Power Electronics: MOSFETs, IGBTs, and high-efficiency power conversion modules for automotive (EV) and industrial grids.

  • Analog & Mixed-Signal ICs: Precision sensors, signal processors, and specialized integrated circuits requiring high signal-to-noise ratios.

  • Optoelectronics & Photonics: Photodetectors, specialized laser diodes, and optical sensors demanding minimal lattice disruption.

  • R&D and Microfabrication: Foundational substrates for advanced university research, MEMS development, and pilot prototyping lines.

Parameter Specification
Growth Method Czochralski (CZ) Monocrystalline
Crystal Orientation <100>, <111>, or Custom Miscuts (± 0.5°)
Conductivity Type / Dopant P-Type (Boron) / N-Type (Phosphorus, Arsenic) / Undoped
Thickness 625 µm ± 15 µm (Standard / Custom Options Available)
Surface Finish Single-Side Polished (SSP) or Double-Side Polished (DSP)
Packaging Sealed under Nitrogen in Class 1 Cleanroom ESD Cassettes

 

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